发明名称 Word-programmable flash memory
摘要 The present invention relates to a memory in integrated circuit comprising a central Flash-type memory comprising memory cells forming pages, a buffer memory capable of storing binary words, and a sequencer for executing an instruction for saving, in a target page of the Flash memory, a series of external words received at an input terminal of the memory. According to the present invention, the sequencer is arranged for, after saving the series of external words in the buffer memory, saving, in the buffer memory, internal words present in the target page and corresponding, due to their address in the page, to locations of words in the buffer memory that have not received any external words, then erasing the target page and saving in the erased page the words present in the buffer memory.
申请公布号 US7079448(B2) 申请公布日期 2006.07.18
申请号 US20040867381 申请日期 2004.06.14
申请人 STMICROELECTRONICS S.A. 发明人 LECONTE BRUNO;CAVALERI PAOLA;ZINK SEBASTIEN
分类号 G11C13/04;G11C16/04;G11C16/10 主分类号 G11C13/04
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