| 摘要 |
A method of controlling a MOS-type photodetector includes transferring electrical charge between a photodiode ( 12 ) and a sensing node ( 3 ) via a transfer transistor. The electrical potential of the sensing node ( 3 ) takes an extreme value when a maximum quantity of electrical charge is stored on the sensing node ( 3 ). During the electrical charge transfer, an electrical potential is applied to the gate electrode of a transfer transistor in such a way that the electrical potential of the channel ( 2 ) of the transfer transistor is brought to a value equal to the extreme value of the electrical potential of the sensing node ( 3 ) multiplied by a number greater than or equal to unity.
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