发明名称 |
Nitride semiconductor LED improved in lighting efficiency and fabrication method thereof |
摘要 |
A nitride semiconductor LED improved in lighting efficiency and a fabrication method thereof, in which an n-doped semiconductor layer is formed on a substrate. An active layer is formed on the n-doped semiconductor layer to expose at least a partial area of the n-doped semiconductor layer. A p-doped semiconductor layer is formed on the active layer. A p+-doped semiconductor layer is formed on the p-doped semiconductor layer. An n+-doped semiconductor layer is formed in at least a partial upper region of the p+-doped semiconductor layer via n-dopant ion implantation. The n+-doped semiconductor layer cooperates with an underlying partial region of the p+-doped semiconductor layer to realize a reverse bias tunneling junction. Also, an upper n-doped semiconductor layer is formed on the n+-doped semiconductor layer to realize lateral current spreading. The invention can improve lighting efficiency by using the reverse bias tunneling junction and/or the lateral current spreading.
|
申请公布号 |
US7078256(B2) |
申请公布日期 |
2006.07.18 |
申请号 |
US20040875321 |
申请日期 |
2004.06.25 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
RYU YUNG HO;YANG KEE JEONG;OH BANG WON;PARK JIN SUB;KIM YOUNG HOON |
分类号 |
H01L21/00;H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119;H01L33/06;H01L33/12;H01L33/32;H01L33/42 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|