| 发明名称 |
Microelectronic device with depth adjustable sill |
| 摘要 |
A microelectronic device includes a substrate, and a patterned feature located over the substrate and a plurality of doped regions, wherein the patterned feature includes at least one electrode. The microelectronic device includes at least one sill region for the enhancement of electron and/or hole mobility.
|
| 申请公布号 |
US7078723(B2) |
申请公布日期 |
2006.07.18 |
| 申请号 |
US20040819250 |
申请日期 |
2004.04.06 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN CHUAN-YI;LEE WEN-CHIN;CHANG SUN-JAY;WU SHIEN-YANG |
| 分类号 |
H01L29/06;H01L21/223;H01L21/336;H01L21/8234;H01L29/786;H01L31/109 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
