发明名称 |
Programmable MOS device formed by stressing polycrystalline silicon |
摘要 |
A programmable memory circuit and a method for programming the same are disclosed. A polycrystalline silicon resistor pair are used in a programmable memory cell. The pair includes a first polycrystalline silicon resistor stressable by a predetermined current thereacross, and a second polycrystalline silicon resistor similarly structured as the first polycrystalline silicon resistor stressable by the predetermined current, wherein when only the first resistor is stressed by the predetermined current, a resistance of the first resistor is lowered as compared to the unstressed second resistor, thereby programming the memory cell.
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申请公布号 |
US7079412(B2) |
申请公布日期 |
2006.07.18 |
申请号 |
US20040784705 |
申请日期 |
2004.02.23 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN CHUNG-HUI;HSU SHUN-LIANG;FANG YEAN-KUEN |
分类号 |
G11C11/00;G11C7/00;G11C17/00;G11C17/14 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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