| 摘要 |
A semiconductor device has a dual-gate electrode structure. The gate electrode has a layered structure including a doped polysilicon film, WSi<SUB>2 </SUB>film, WN film and a W film. The WSi<SUB>2 </SUB>film formed on the polysilicon film in the P-channel area is formed of a number of WSi<SUB>2 </SUB>particles disposed apart from one another, preventing a bilateral diffusion of impurities doped in the polysilicon film.
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