发明名称 |
Capacitor constructions, semiconductor constructions, and methods of forming electrical contacts and semiconductor constructions |
摘要 |
The invention includes a method of forming a semiconductor construction. A semiconductor substrate is provided, and a conductive node is formed to be supported by the semiconductor substrate. A first conductive material is formed over the conductive node and shaped as a container. The container has an opening extending therein and an upper surface proximate the opening. The container opening is at least partially filled with an insulative material. A second conductive material is formed over the at least partially filled container opening and physically against the upper surface of the container. The invention also includes semiconductor structures.
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申请公布号 |
US7078757(B2) |
申请公布日期 |
2006.07.18 |
申请号 |
US20040917705 |
申请日期 |
2004.08.13 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
BASCERI CEM;DERDERIAN GARO J. |
分类号 |
H01L27/108;H01L21/02;H01L21/768 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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