发明名称 Capacitor constructions, semiconductor constructions, and methods of forming electrical contacts and semiconductor constructions
摘要 The invention includes a method of forming a semiconductor construction. A semiconductor substrate is provided, and a conductive node is formed to be supported by the semiconductor substrate. A first conductive material is formed over the conductive node and shaped as a container. The container has an opening extending therein and an upper surface proximate the opening. The container opening is at least partially filled with an insulative material. A second conductive material is formed over the at least partially filled container opening and physically against the upper surface of the container. The invention also includes semiconductor structures.
申请公布号 US7078757(B2) 申请公布日期 2006.07.18
申请号 US20040917705 申请日期 2004.08.13
申请人 MICRON TECHNOLOGY, INC. 发明人 BASCERI CEM;DERDERIAN GARO J.
分类号 H01L27/108;H01L21/02;H01L21/768 主分类号 H01L27/108
代理机构 代理人
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