| 摘要 |
The power element, applicable e.g. to an NPNP thyristor or IGBT (insulated gate bi-polar transistor), consists of a semiconductor substrate (1) with a first type of conductivity and having lateral surfaces with vertical (1a) and recessed (1b) sections. It has a control electrode region (2) with a second type of conductibility, formed in a first main surface (1c) of the substrate and having primary electrode regions (3). A second main surface (1d) of the substrate opposite the first has a second electrode region (4) and a guard ring (5) surrounding it.
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