发明名称 |
Photonic crystal light emitting device |
摘要 |
A photonic crystal structure is formed in an n-type layer of a III-nitride light emitting device. In some embodiments, the photonic crystal n-type layer is formed on a tunnel junction. The device includes a first layer of first conductivity type, a first layer of second conductivity type, and an active region separating the first layer of first conductivity type from the first layer of second conductivity type. The tunnel junction includes a second layer of first conductivity type and a second layer of second conductivity type and separates the first layer of first conductivity type from a third layer of first conductivity type. A photonic crystal structure is formed in the third layer of first conductivity type.
|
申请公布号 |
US2006151794(A1) |
申请公布日期 |
2006.07.13 |
申请号 |
US20060373639 |
申请日期 |
2006.03.09 |
申请人 |
WIERER JONATHAN J JR;KRAMES MICHAEL R;SIGALAS MIHAIL M |
发明人 |
WIERER JONATHAN J.JR.;KRAMES MICHAEL R.;SIGALAS MIHAIL M. |
分类号 |
G02B6/122;H01L33/08;H01L33/20 |
主分类号 |
G02B6/122 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|