| 摘要 |
In one embodiment, a method for forming a material on a substrate is provided which includes positioning a substrate containing a dielectric material having vias formed therein within a process chamber, forming a barrier layer within the vias and on the dielectric material during a barrier deposition process, forming a ruthenium layer on the barrier layer during a ruthenium deposition process, and filling the vias with a copper material during a copper deposition process. The copper material may be formed by depositing a copper bulk layer over a copper seed layer. The method further provides that the ruthenium layer may be formed by an atomic layer deposition process (ALD) or a physical vapor deposition (PVD) process and the copper material may be formed by an electroless chemical plating process, an electroplating process, a chemical vapor deposition process, an ALD process and/or a PVD process.
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