| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a radiation imager whose manufacturing process is simplified and which can be manufactured at high yield and at low cost. <P>SOLUTION: The radiation imager is provided with a radiation imaging substrate having a pixel area 10 and a wavelength conversion body to convert radiation by wavelength. The pixel area 10 is provided with on an insulating substrate 1, a plurality of capacitance elements C11-C33 arranged like a matrix, TFTs (T11-T33) as a switch and a photoelectric conversion element that are provided with a semiconductor layer constituting a photoelectric conversion layer for converting radiation into potential, a gate electrode and a source-drain electrode and that are connected with the capacitance elements C11-C33, a bias wiring (Vs line) to apply bias to the capacitance elements C11-C33, gate wirings Vg 1-3 to supply driving signals to the TFTs (T11-T33), and signal wirings Sig 1-3 to read out the output from the TFTs (T11-T33). Such a structure is used to accumulate potentials equivalent to a quantity of radiation entering the TFTs (T11-T33) in the capacitance elements C11-T33, and the accumulated potential is output. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
