| 摘要 |
PROBLEM TO BE SOLVED: To provide a resistor chip where thin film resistors are stacked in high density. SOLUTION: There are stacked on a silicon substrate 1 a plurality of layers of a thin film resistor group separated up and down. The thin film grouped resistors of each layer comprise a plurality of band-shaped thin film resistors 3-1 to 3-4 arranged in parallel on the same flat plane. The plurality of the thin film resistors 3-1 to 3-4 for every layer are covered respectively with the interlayer insulating films 4-1 to 4-4 of each layer. A plurality of plugs 6 are connected respectively to the plurality of the thin film resistors 7 of each layer, penetrate a plurality of layers of the interlayer insulating films 4-1 to 4-4 up and down, and derived onto the surface of the uppermost interlayer insulating film 4-4. To upper ends of the plurality of the plugs 6 there are joined pads 7 (7, 7-1a, 7-1b to 7-4a, 7-4b), respectively. The plurality of the pads 7 are separately disposed on the uppermost interlayer insulating film 4-4. The uppermost interlayer insulating film 4-4 is covered with a passivation film 8 excepting the pad 7. COPYRIGHT: (C)2006,JPO&NCIPI
|
