| 摘要 |
A method for post lithographic critical dimension shrinking of a patterned semiconductor feature includes forming an overcoat layer over a patterned photoresist layer, and removing portions of the overcoat layer initially formed over top surfaces of the patterned photoresist layer. The remaining portions of the overcoat layer on sidewalls of said patterned photoresist layer are reacted so as to chemically bind the remaining portions of the overcoat layer on the sidewalls.
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