METHOD FOR PRODUCING MIXED STACKED STRUCTURES, DIFFERENT INSULATING AREAS AND/OR LOCALISED VERTICAL ELECTRICAL CONDUCTING AREAS

摘要

The invention relates to a method for producing a semiconductor structure consisting in forming in a controlled manner through a mask (31) at least one first area made of an insulating material (36) in a first substrate (30) made of a semiconductor material to the level of the mask lower surface (35) prior to and after removing the mask.