发明名称 MATERIAL FOR FORMING RESIST PROTECTIVE FILM AND RESIST PATTERN FORMING METHOD USING SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a material for forming a resist protective film which simultaneously prevents deterioration in a resist film during liquid immersion lithography using water or other various liquids for liquid immersion lithography and deterioration in the liquid itself for liquid immersion lithography used in a liquid immersion lithography process, does not increase the number of processing steps, and improves the post exposure time delay resistance of the resist film. <P>SOLUTION: The material for forming a resist protective film contains at least an acrylic polymer having at least a constitutional unit represented by formula (1) (where R<SB>1</SB>is a 1-5C linear or branched alkylene, and R<SB>2</SB>is a 1-15C linear or branched alkyl or a hydrocarbon group having an alicyclic structure) and a solvent. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006184575(A) 申请公布日期 2006.07.13
申请号 JP20040378235 申请日期 2004.12.27
申请人 TOKYO OHKA KOGYO CO LTD 发明人 ISHIZUKA KEITA;ENDO KOTARO;HIRANO TOMOYUKI
分类号 G03F7/11;C08F220/10;G03F7/039;H01L21/027 主分类号 G03F7/11
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