| 摘要 |
Methods for forming a spacer ( 44 ) for a first structure ( 24, 124 ), such as a gate structure of a FinFET, and at most a portion of a second structure ( 14 ), such as a fin, without detrimentally altering the second structure. The methods generate a first structure ( 24 ) having a top portion ( 30, 130 ) that overhangs an electrically conductive lower portion ( 32, 132 ) and a spacer ( 44 ) under the overhang ( 40, 140 ). The overhang ( 40, 140 ) may be removed after spacer processing. Relative to a FinFET, the overhang protects parts of the fin ( 14 ) such as regions adjacent and under the gate structure ( 24, 124 ), and allows for exposing sidewalls of the fin ( 14 ) to other processing such as selective silicon growth and implantation. As a result, the methods allow sizing of the fin ( 14 ) and construction of the gate structure ( 24, 124 ) and spacer without detrimentally altering (e.g., eroding by forming a spacer thereon) the fin ( 14 ) during spacer processing. A FinFET ( 100 ) including a gate structure ( 24, 124 ) and spacer ( 44 ) is also disclosed.
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