发明名称 |
Light Emitting Device and Method of Manufacturing the Same |
摘要 |
A light emitting device is provided which has a structure for preventing degradation of a light emitting element due to water and oxygen contained in an interlayer insulating film formed between a TFT and the light emitting element. A TFT is formed on a substrate, an inorganic insulating film is formed on the TFT from an inorganic material and serves as a first insulating film, an organic insulating film is formed on the first insulating film from an organic material and serves as a second insulating film, and an inorganic insulating film is formed on the second insulating film from an inorganic material and serves as a third insulating film. Thus obtained is a structure for preventing the second insulating film from releasing moisture and oxygen. In order to avoid defect in forming the film, a portion of the third insulating film where a contact hole is formed is removed alone. Then, a light emitting element composed of an anode, an organic compound layer, and a cathode is formed on the third insulating film. A TFT and a light emitting element in a light emitting device of this application are connected to each other through a wire formed in a contact hole. |
申请公布号 |
US2006151789(A1) |
申请公布日期 |
2006.07.13 |
申请号 |
US20060276651 |
申请日期 |
2006.03.09 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD., A JAPAN CORPORATION |
发明人 |
MURAKAMI SATOSHI;TAKAYAMA TORU;AKIMOTO KENGO |
分类号 |
H01L29/04;H05B33/04;G09F9/30;H01L21/318;H01L21/77;H01L21/84;H01L27/12;H01L27/32;H01L29/786;H01L51/50;H01L51/52;H05B33/10 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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