| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve the problem in ultrasonic flip-chip bonding wherein a semiconductor element gets damaged during the ultrasonic flip-chip bonding when a height of protruding electrodes of a film substrate varies by 2 to 4μm or when ultrasonic longitudinal oscillation is applied. <P>SOLUTION: In the stage 1 of a manufacturing apparatus for a semiconductor device, an elastic body 3 is formed inside a vacuum adsorption groove 2 formed on the surface of the stage 1. If the height of the protruding electrodes 7 of the semiconductor element 6 varies by 2 to 4μm when ultrasonic waves are applied while heating and pressurizing electrodes 9 of a semiconductor element 6 and the protruding electrodes 7 of the film substrate 5 in ultrasonic flip-chip bonding, the elastic body 3 individually absorbs the variation in height of the protruding electrodes 7, resulting in no damage caused on a ground of the electrodes 9. In addition, even if unnecessary longitudinal oscillation occurring this time is applied, the elastic body 3 absorbs the oscillation, thereby preventing the ground of the electrode 9 from getting damaged. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
