NOVEL FLASH MEMORY AND ITS MANUFACTURING TO MINIMIZE THE CROSS-TALK EFFECT BY SHIELDING FLOATING GATE USING SCREEN-LAYER OR GROUND-LAYER,申请号KR20050002292-传众专利搜索

发明名称	NOVEL FLASH MEMORY AND ITS MANUFACTURING TO MINIMIZE THE CROSS-TALK EFFECT BY SHIELDING FLOATING GATE USING SCREEN-LAYER OR GROUND-LAYER
摘要
申请公布号	KR20060081856(A)	申请公布日期	2006.07.13
申请号	KR20050002292	申请日期	2005.01.10
申请人	KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY	发明人	RYU, SEONG WAN;CHOI, YANG KYU
分类号	H01L27/115;H01L21/8247	主分类号	H01L27/115
代理机构		代理人
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