| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gas diffusion plate in which yttria excellent in the plasma resistance and in the halogen gas resistance is solidly applied to the entire surface of each gas discharge hole provided to an alumina base material or an aluminum base material, which eliminates the generation of particles by preventing a material in each gas discharge hole from being etched owing to discharge, thereby enhancing the manufacturing yield of semiconductor, and providing inexpensive plate; and to provide a manufacturing method thereof. <P>SOLUTION: A gas diffusion plate consists of an alumina base material or an aluminum base material provided with one or more circular through-holes, and an yttria cylindrical pipe shrink-fitted to each of the circular through holes and provided with a gas discharge hole. A manufacturing method thereof is also provided. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
