发明名称 POLISHING COMPOSITION FOR REDUCING EROSION IN SEMICONDUCTOR WAFER
摘要 <p><P>PROBLEM TO BE SOLVED: To selectively remove a barrier layer, and at the same time reduce dishing, and further control the removing speed of a low-k and super-low-k insulating layer. <P>SOLUTION: A polishing composition has a first component, a second component, and a weight average molecular weight of 1,000 to 1,000,000 grams/mole. The first component is 50 to 95 mole percent vinyl alcohol, and the second component contains 0.001 to 2 wt% of a polyvinyl alcohol copolymer more hydrophobic than the vinyl alcohol and 0.05 to 50 wt% silica abrasive particles and has a pH of 8 to 12. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006186356(A) 申请公布日期 2006.07.13
申请号 JP20050364369 申请日期 2005.12.19
申请人 ROHM & HAAS ELECTRONIC MATERIALS CMP HOLDINGS INC 发明人 BIAN JINRU;LAVOIE RAYMOND L JR;QUANCI JOHN;YE QIANQIU
分类号 H01L21/304;B24B37/00;C09K3/14 主分类号 H01L21/304
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