| 摘要 |
PROBLEM TO BE SOLVED: To make a ridge crestal plane to be exposed in a simple method while covering other element surface with a desired film or layer. SOLUTION: An SiO<SB>2</SB>mask 2 is formed on a semiconductor element wafer 1 by vapor deposition and etching, and a ridge 1R is formed by etching a semiconductor layer (Figure 1.A). Without removing the SiO<SB>2</SB>mask 2, an insulating film 3 of SiO<SB>2</SB>is formed by a CVD method (Figure 1.B). A photoresist 4 of low viscosity, 100cP or less, is applied by spin coating, so that no insulating film 3 at a crestal plane top part S of the ridge 1R is covered (Figure 1.C). The photoresist 4 is optically cured to provide a resist mask 4M (Figure 1.C). Using the etchant of hydrofluoric acid, the insulating film 3 of SiO<SB>2</SB>and the mask 2 of SiO<SB>2</SB>are etched to make a crestal plane 1RS of the ridge 1R exposed (Figure 1.D). After that, a resist mask 4M is removed to provide a semiconductor element 100 having the ridge 1R, with its crestal plane 1RS exposed while other surface covered with SiO<SB>2</SB>insulating film 3 (Figure 1.E). COPYRIGHT: (C)2006,JPO&NCIPI
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