| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for reducing the occupation area of an MISFET for electrostatic protection, and to provide an MISFET for electrostatic protection having high electrostatic protection capability by facilitating generation of a substrate current thereby facilitating conduction of a parasitic bipolar transistor. SOLUTION: Occupation area of the non-silicide region of a drain is reduced by lowering impurity concentration of the non-silicide region and forming a shallow junction thereby increasing the resistivity of the non-silicide region as compared with prior art. Furthermore, an impurity layer of intermediate concentration having the same polarity as that of a well is formed below the non-silicide region and a pn junction of large leak current is formed in order to facilitate generation of a substrate current and conduction of a parasitic bipolar transistor thus enhancing electrostatic protection capability. COPYRIGHT: (C)2006,JPO&NCIPI
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