发明名称 METHOD OF FORMING FILM, FILM FORMING APPARATUS AND STORAGE MEDIUM
摘要 PROBLEM TO BE SOLVED: To deposit a continuous thin film even when using a highly cohesive metal on a surface of a workpiece having recesses with high aspect ratio. SOLUTION: A film deposition method comprises a step of carrying a substrate in a reaction chamber and mounting the same, a step of feeding a raw gas containing a compound of a first metal into the reaction chamber to thereby cause the surface of the substrate to adsorb the compound of the first metal, a step of bringing the compound of the first metal into contact with a reducing plasma resulting from activation of a reducing gas to thereby obtain a first metal layer, and a step of bringing a target electrode whose at least surface portion consists of a second metal different from the first metal into contact with sputtering plasma and incorporating the thus ejected second metal into the first metal layer to thereby obtain an alloy layer, wherein this sequence of adsorption, reduction and alloy formation steps is carried out one or more times. By this method, even when the cohesive force of the first metal is large, any migration thereof on the substrate is suppressed to thereby realize formation of a continuous thin film of small thickness. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006183145(A) 申请公布日期 2006.07.13
申请号 JP20050345951 申请日期 2005.11.30
申请人 TOKYO ELECTRON LTD 发明人 YOSHII NAOKI;KOJIMA YASUHIKO
分类号 C23C14/14;C23C14/02;C23C14/34;H01L21/285;H01L21/3205;H01L23/52 主分类号 C23C14/14
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