发明名称 Solid state charge qubit device
摘要 Ionisation of one of a pair of dopant atoms ( 11, 12 ) in a substrate ( 13 ) creates a double well potential, and a charge qubit is realised by the location of one or more electrons or holes ( 14 ) within this potential. The dopant atoms may comprise phosphorous atoms, located in a silicon substrate. A solid state quantum computer may be formed using a plurality of pairs of dopant atoms ( 11, 12 ), corresponding gate electrodes ( 22, 23 ), and read-out devices comprising single electron transistors ( 24 ).
申请公布号 US2006151775(A1) 申请公布日期 2006.07.13
申请号 US20050524951 申请日期 2005.12.08
申请人 HOLLENBERG LLOYD CHRISTOPHER L;DZURAK ANDREW S;WELLARD CAMERON;HAMILTON ALEXANDER R;REILLY DAVID J;MILBURN GERARD J;CLARK ROBERT G 发明人 HOLLENBERG LLOYD CHRISTOPHER L.;DZURAK ANDREW S.;WELLARD CAMERON;HAMILTON ALEXANDER R.;REILLY DAVID J.;MILBURN GERARD J.;CLARK ROBERT G.
分类号 H01L31/109;G06N99/00 主分类号 H01L31/109
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