| 摘要 |
A power semiconductor device comprises a semiconductor substrate, a gate electrode region (control electrode region), a cathode electrode region (first main electrode region), an anode electrode region (second main electrode region) and a guard ring. The semiconductor substrate has a side surface portion having a vertical portion formed substantially vertical to a main surface and a mesa portion connected to the vertical portion in a cross section. The gate electrode region is formed in a first main surface of the semiconductor substrate. The cathode electrode region is formed in part of a surface of the gate electrode region. The anode electrode region is formed in a second main surface of the semiconductor substrate. The guard ring is formed in the second main surface of the semiconductor substrate and annularly surrounds the anode electrode region. With this constitution provided is a power semiconductor device which makes the impurity diffusion length of the anode electrode region shallower in order to ensure reduction in recovery loss.
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