Semiconductor memory device with voltage pumping circuit - comprises oscillator for generating pulses, and voltage pumping circuit for generating at initial power-up state, first output voltage equal to supply voltage

摘要

The memory device arranged to be powered by a supply voltage, comprises the voltage pumping circuit (300) for generating at an initial power-up state a first output voltage Vpp being substantially identical to the supply voltage, and pumping up the output voltage to a second output voltage Vpp higher than the first output voltage Vpp prior to or upon the semiconductor memory being enabled in response to pulses output from the oscillator (100). The pumping circuit producing a raised voltage Vpp may have an active kicker for compensating for dropping of the raised voltage Vpp, a detector for detecting the level of the raised Vpp and clampers for preventing the raised voltage Vpp from being raised over a given level.