| 摘要 |
PROBLEM TO BE SOLVED: To eliminate an under cut generated by wet anisotropic etching of a silicon wafer. SOLUTION: A method of manufacturing a semiconductor device comprises an etching process of carrying out an anisotropic etching of a silicon wafer 102 forming an etching mask by using alkali solution; and a breaking process of breaking a projection of the etching mask projecting against the opening 103 of the silicon wafer 102 so as to reside at the corner of the etching mask after the etching process. The breaking process breaks the projection by adding a mechanical shock. For example, the projection is broken by adding the mechanical shock by means of any one of a brush scrubber cleaning, an ultrasonic cleaning, a high pressure gas stream spraying cleaning, a high pressure water stream spraying cleaning, or an aerosol cleaning. COPYRIGHT: (C)2006,JPO&NCIPI
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