| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which accumulation and movement, etc. of charges at the neighborhood of an interface including the interface between a semiconductor substrate and an insulating layer are suppressed, and to provide its manufacturing method. SOLUTION: In the semiconductor device 10 provided with a constitution in which transfer electrodes 2a-2c are arranged over the semiconductor substrate 1 with the insulating layer 3 in-between, the first semiconductor region 4 of a single conductive type, the second semiconductor region 5 of a reverse conductive type to the single conductive type, and the third semiconductor region 6 of the single conductive type are provided at a position overlapping with a region right under the transfer electrodes 2a-2c in the semiconductor substrate 1. The second semiconductor region 5 is formed on the first semiconductor region 4. The third semiconductor region 6 is so formed on the second semiconductor region 5 that the position of a maximum point 8 of potential at depletion of the second semiconductor region 5 becomes deeper than the case where the third semiconductor region 6 does not exist. COPYRIGHT: (C)2006,JPO&NCIPI
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