HETERO-EPITAXIAL SEMICONDUCTOR SUBJECTED TO INTERNAL GETTERING AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide an SOI wafer and a method of manufacturing the wafer. SOLUTION: The SOI wafer is a hetero-epitaxial semiconductor wafer having a front surface and a back surface, a center plane between the front surface and the back surface, and a circumferential edge connecting between the front surface and the back surface; and including a first material. Further, the semiconductor wafer has a hetero-epitaxial layer forming the front surface of the wafer, and including a second material having a crystal structure different from that of the first material; a surface layer including the first material rather than the second material and being adjacent to the hetero-epitaxial layer; and a bulk layer including the first material rather than the second material and extending through the center plane adjacently to the surface layer. COPYRIGHT: (C)2006,JPO&NCIPI