| 摘要 |
PROBLEM TO BE SOLVED: To ensure the adhesiveness under a pad electrode even if an active layer is provided under the pad electrode, and to stably form a barrier metal structure on the active plane. SOLUTION: A barrier metal film 8 is formed on an interlayer insulating film 6 so as to cover the surfaces of impurity diffused layers 5a and 5b, and a photo lithography technique is adopted to form a resist pattern R by covering an opening 7 and exposing the surface of the barrier metal film 8 arranged under a pad electrode 16. While the resist pattern R is used as a mask, the barrier metal film 8 is etched to remove the barrier metal film 8 on the interlayer insulating film 6 arranged under the pad electrode 16, and a wiring layer 9 connected with a gate electrode 4 and the impurity diffused layers 5a and 5b is formed on the interlayer insulating film 6 with the barrier metal film 8 interposed, and then the pad electrode 16 is formed on the gate electrode 4 and the impurity diffused layers 5a and 5b. COPYRIGHT: (C)2006,JPO&NCIPI
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