发明名称 METHOD FOR REDUCING FEATURE LINE EDGE ROUGHNESS
摘要 A method of patterning a feature in a substrate to reduce edge roughness comprises forming a resist layer overlying a substrate, exposing the resist layer to create an image of a feature, and developing the exposed resist layer to leave a portion of the resist layer that creates the image of the feature. The method then includes treating the exposed resist layer with a plasma to cure the portion of the resist layer creating the feature image. The plasma treatment has an ion bombardment level insufficient to substantially etch the underlying substrate. The method then includes etching the underlying substrate to create the feature.
申请公布号 US2006154184(A1) 申请公布日期 2006.07.13
申请号 US20050905596 申请日期 2005.01.12
申请人 ADVANCED MICRO DEVICES, INC. 发明人 MAHOROWALA ARPAN P.;BELL SCOTT A.;MURTHY S. DAKSHINA;RASGON STACY A.;YAN HONGWEN;YANG CHIH-YUH
分类号 G03F7/00 主分类号 G03F7/00
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