Semiconductor device, wiring substrate, and method for manufacturing wiring substrate

摘要

The reliabilities of a wiring substrate and a semiconductor apparatus are improved by reducing the internal stress caused by the difference of thermal expansion coefficients between a base substrate and a semiconductor chip. A wiring layer ( 5 ) is provided on one surface of a silicon base ( 3 ). An electrode as the uppermost layer of the wiring layer ( 5 ) is provided with an external bonding bump ( 7 ). A through-electrode ( 4 ) is formed in the base ( 3 ) for electrically connecting the wiring layer ( 5 ) and an electrode terminal. The electrode terminal on the chip mounting surface is bonded to an electrode terminal of a semiconductor chip ( 1 ) by an internal bonding bump ( 6 ). The thermal expansion coefficient of the silicon base ( 3 ) is equivalent to that of the semiconductor chip ( 1 ) and not more than that of the wiring layer ( 5 ).