| 摘要 |
<p>An electrode, for a light emitting semiconductor device, comprises (a) a transparent electrode in contact with a p-conducting GaN-based compound semiconductor surface; and (b) a wire bonding electrode which is in electrical contact with the transparent electrode and which includes a semiconductor-contacting region having a higher contact resistance per unit area wrt. the semiconductor than that of a transparent electrode region in contact with the semiconductor. Also claimed are similar electrodes in which the transparent electrode consists of a first layer of Au, Pt and/or Pd and an overlying second transparent metal oxide layer selected from oxides of Ni, Ti, Sn, Cr, Co, Zn, Cu, Mg and In. Further claimed are processes for producing the above electrode.</p> |
