| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor chip capable of preventing short circuits between bumps due to the migration of metal that is the material of the bump, a semiconductor device using the same, and a manufacturing method of the semiconductor chip. <P>SOLUTION: A master chip 1 has a semiconductor substrate 11 forming its substrate, a surface protection film 13 covering the surface of the semiconductor substrate 11, and a bump B1 that is formed to rise from the surface protection film 13 in such a manner as to cover an opening 14 formed in this surface protection film 13 and comprising gold (Au). On the surface of the bump B1, there is formed an alloy film 15 comprising an alloy of gold and titanium (Ti) that are the materials of this bump B1 in the entire area. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
