| 摘要 |
PROBLEM TO BE SOLVED: To realize a semiconductor device having an electrode and a wiring of low resistance. SOLUTION: A semiconductor layer has the regions where a p-type dopant, an n-type dopant and (p+n) dopant are respectively introduced, and after eliminating a dopant deposit layer on each of these regions by means of a heat treatment, a silicide film is formed on the semiconductor layer by depositing and heat-treating a metal material. Alternatively, the silicide film is formed by introducing a dopant into the dopant deposit layer, thereafter by depositing a metal material film on the dopant deposit layer, and by carrying out a heat treatment of the metal material film. COPYRIGHT: (C)2006,JPO&NCIPI |
