发明名称 METAL MASK
摘要 PROBLEM TO BE SOLVED: To solve such problems that, when a resist is coated by a spin coater, resist liquid spread by centrifugal force is stored at four corners of a wafer and thicknesses at the corners are increased as compared with that of a center portion, and when vapor deposition or sputtering is performed by mounting the resist film on the conventional metal mask with residues of the resist film remaining on the corners, adhesion of upper and lower masks 21, 23 to the wafer is worsened by the residues of the resist, and the accuracy of the vapor deposition pattern is degraded. SOLUTION: The metal mask comprises an upper mask 2 having open windows 5 of a plurality of predetermined patterns, a middle plate 3 having an opening part 6, and a lower mask 4 having open windows 6 of a plurality of predetermined patterns. The metal mask is formed by applying triangular half etching 10, 11 to four corners of faces of the upper mask 2 and the lower mask 4 in contact with the middle plate 3. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006183115(A) 申请公布日期 2006.07.13
申请号 JP20040380446 申请日期 2004.12.28
申请人 EPSON TOYOCOM CORP 发明人 NAITO MATSUTARO;MURAKAMI SHIRO
分类号 C23C14/04;H03H3/02 主分类号 C23C14/04
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