SEMICONDUCTOR DEVICE INCLUDING A CONDUCTIVE LAYER BURIED IN AN OPENING AND METHOD OF MANUFACTURING THE SAME

摘要

A trench capacitor is formed in a semiconductor substrate via a capacitor insulating film (13). The trench has a conductive layer for storage node electrode buried in a trench. The conductive layer includes a first (14), a second (17), and third conductive layers. The first conductive layer is buried in a lower portion of the trench. The second conductive layer is buried in a recess on the upper surface of the first conductive layer. The third conductive layer is buried to contact with the first and second conductive layers.