发明名称 Verfahren und Vorrichtung zur Herstellung von Masken zur Benutzung mit Dipolbelichtung
摘要 A method of generating complementary masks for use in a dipole illumination process. The method includes the steps of identifying "horizontal" critical features and "vertical" critical features from a plurality of features forming a layout; identifying interconnection areas which are areas in which one of the horizontal critical features or the vertical critical features contacts another feature of the layout; defining a set of primary parameters on the basis of the proximity of the plurality of features relative to one another; and generating an edge modification plan for each interconnection area based on the primary parameters. A horizontal mask pattern is then generated by compiling the horizontal critical features, a first shield plan for the vertical critical features and the interconnection areas containing a horizontal critical feature modified by the edge modification plan. A vertical mask pattern is then generated by compiling the vertical critical features, a second shield plan for the horizontal critical features and the interconnection areas containing a vertical critical feature modified by the edge modification plan. <IMAGE>
申请公布号 DE60208639(T2) 申请公布日期 2006.07.13
申请号 DE2002608639T 申请日期 2002.11.04
申请人 ASML MASKTOOLS B.V., VELDHOVEN;ASML NETHERLANDS B.V., VELDHOVEN 发明人 CAPODIECI, LUIGI;TORRES ROBLES, JUAN ANDRES;VAN OS, LODEWIJK HUBERTUS
分类号 G03F7/20;G03F1/00;H01L21/027 主分类号 G03F7/20
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