发明名称 |
Verfahren und Vorrichtung zur Herstellung von Masken zur Benutzung mit Dipolbelichtung |
摘要 |
A method of generating complementary masks for use in a dipole illumination process. The method includes the steps of identifying "horizontal" critical features and "vertical" critical features from a plurality of features forming a layout; identifying interconnection areas which are areas in which one of the horizontal critical features or the vertical critical features contacts another feature of the layout; defining a set of primary parameters on the basis of the proximity of the plurality of features relative to one another; and generating an edge modification plan for each interconnection area based on the primary parameters. A horizontal mask pattern is then generated by compiling the horizontal critical features, a first shield plan for the vertical critical features and the interconnection areas containing a horizontal critical feature modified by the edge modification plan. A vertical mask pattern is then generated by compiling the vertical critical features, a second shield plan for the horizontal critical features and the interconnection areas containing a vertical critical feature modified by the edge modification plan. <IMAGE> |
申请公布号 |
DE60208639(T2) |
申请公布日期 |
2006.07.13 |
申请号 |
DE2002608639T |
申请日期 |
2002.11.04 |
申请人 |
ASML MASKTOOLS B.V., VELDHOVEN;ASML NETHERLANDS B.V., VELDHOVEN |
发明人 |
CAPODIECI, LUIGI;TORRES ROBLES, JUAN ANDRES;VAN OS, LODEWIJK HUBERTUS |
分类号 |
G03F7/20;G03F1/00;H01L21/027 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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