FUNCTIONAL DEVICE AND METHOD FOR FORMING OXIDE MATERIAL

摘要

There have been demands on transparent electrode materials and magnetic materials having a wide range of applications. Disclosed are a novel functional device and a method for forming an oxide material for meeting such demands. Specifically disclosed is a functional device comprising an Al<SUB>x</SUB>Ga<SUB>y</SUB>In<SUB>z</SUB>N base (wherein 0 = x = 1, 0 = y = 1, 0 = z = 1) and an oxide material composed of a metal oxide which is formed on the Al<SUB>x</SUB>Ga<SUB>y</SUB>In<SUB>z</SUB>N base. This functional device is characterized in that the metal oxide is TiO<SUB>2</SUB> or the like. In this functional device, a film which hardly reflects at the interface and has both chemical resistance and durability is integrally formed on a group III nitride having excellent physical and chemical properties.