| 发明名称 |
COPPER ALLOY SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE TARGET |
| 摘要 |
<p>The target material comprises 0.4-5 weight% of tin, without precipitate. The resistivity of the target material is 2.2 Microohm.cm or more. An independent claim is also included for manufacturing method of copper alloy sputtering target.</p> |
| 申请公布号 |
KR100600975(B1) |
申请公布日期 |
2006.07.13 |
| 申请号 |
KR20047011298 |
申请日期 |
2002.12.04 |
| 申请人 |
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发明人 |
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| 分类号 |
C23C14/34;C22C9/00;C22C9/01;C22C9/02;C22C19/00;C22F1/00;H01L21/285;H01L21/768 |
主分类号 |
C23C14/34 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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