| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce a film production cost by using triethylaluminum, as an additive, contained in an inexpensive and low-purity raw material of diethylzinc as an impurity. <P>SOLUTION: A method for producing a ZnO-based transparent electroconductive film while using diethylzinc with a low purity (99.99 to 98% or 99.99 to 90%) as the raw material through a MOCVD (organo-metal chemical vapor deposition) process comprises: using water vapor (H<SB>2</SB>O) as an oxidizing agent; diverting triethylaluminum contained in the raw material as the impurity to the additive (and further using diborane as the additive); and subjecting the diethylzinc, water vapor (H<SB>2</SB>O), triethylaluminum (and diborane) to a gas-phase reaction. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
