| 摘要 |
PROBLEM TO BE SOLVED: To provide a long life nitride semiconductor laser element allowing the COD level to be high. SOLUTION: The nitride semiconductor laser element comprises a first conductivity type nitride semiconductor layer, an In-containing active layer, a second conductivity type nitride semiconductor layer different from the first conductivity type on the main surface of a nitride semiconductor substrate, and a stripe ridge on the second conductivity type nitride semiconductor layer. On the main surface of the nitride semiconductor substrate, at least a first region just beneath the edge is an off-surface inclined to a reference crystal surface, the active layer includes an In-containing well layer and a plurality of barrier layers at least one of which is made of GaN. COPYRIGHT: (C)2006,JPO&NCIPI
|
