| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for removing a resist film capable of removing the resist film simply and reliably. SOLUTION: The resist film 11 has a cured layer 12 of which a surface is degenerated and cured by implantation, and a resist layer 13 not cured under the cured layer 12. First, a thick cured layer 12A formed on the upper face of the resist film 11 is removed by a chemical mechanical polishing method (CMP). After the cured layer 12A is removed, the resist film 11 after removal of the cured layer 12A is dipped in sulfuric acid R to dissolve the resist layer 13, and a thin cured layer 12B formed in a peripheral side of the resist film 11 is eliminated. COPYRIGHT: (C)2006,JPO&NCIPI |
