发明名称 FIELD EFFECT TRANSISTOR AND ITS APPLICATION DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a photo-relay in which a MOSFET capable of satisfying both of a low on-state resistance and a high withstand voltage as well as achieving a small output capacitance (C(gd), etc.) is used. <P>SOLUTION: This MOSFET comprises a light emitting element to which a switching controlled input signal is supplied, a photovoltaic element which receives light emitted from the light emitting element and generates direct electric power, a drain electrode, and a source electrode, and a gate electrode to which an output voltage generated by the photovoltaic element is supplied. In a photo-relay using the MOSFET, the output voltage of the photovoltaic element supplied to the gate electrode of the MOSFET is made to be equal to or higher than a withstand voltage between the source and drain electrodes. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006186379(A) 申请公布日期 2006.07.13
申请号 JP20050379862 申请日期 2005.12.28
申请人 TOSHIBA CORP 发明人 KITAGAWA MITSUHIKO;AIZAWA YOSHIAKI
分类号 H01L27/146;H01L27/04;H01L29/78;H01L29/786;H01L31/12 主分类号 H01L27/146
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