发明名称 CAPACITIVE MICROMACHINED ULTRASOUND TRANSDUCER FABRICATED WITH EPITAXIAL SILICON MEMBRANE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide capacitive micromachined ultrasound transducer (cMUT) and method of manufacturing the same. <P>SOLUTION: A capacitive micromachined ultrasound transducer (cMUT) cell (10) is provided. This cMUT cell (10) includes a lower electrode (18). Furthermore, the cMUT cell (10) includes a diaphragm (22) disposed adjacent to the lower electrode (18) such that a gap having a first gap width is formed between the diaphragm and the lower electrode (18), wherein the diaphragm (22) comprises one of a first epitaxial layer (40) or a first polysilicon layer. In addition, a stress reducing material is disposed in the first epitaxial layer (40). <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006186999(A) 申请公布日期 2006.07.13
申请号 JP20050367304 申请日期 2005.12.21
申请人 GENERAL ELECTRIC CO <GE> 发明人 SMITH LOWELL SCOTT;MILLS DAVID MARTIN;FORTIN JEFFREY BERNARD;TIAN WEI-CHENG;LOGAN JOHN ROBERT
分类号 H04R19/00;B81B3/00;B81C3/00;H04R31/00 主分类号 H04R19/00
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