发明名称
摘要 <p>A switch, used as an electronic-memory element, comprising a conductive organic polymer layer sandwiched between, and in contact with, two metallic conductive elements. In an initial post-fabrication state, the organic polymer layer is relatively highly conductive, the post-fabrication constituting a first stable state of the memory element that can serve to represent a binary bit "1 or 0," depending which of two possible encoding conventions is employed. A relatively high voltage pulse can be passed between the two metal conductive elements, resulting in a market decrease in the current-carrying capacity of the organic polymer layer sandwiched between the two conductive elements. This change in conductivity of the organic polymer layer is generally irreversible, and constitutes a second stable state of the memory element that may be used to encode a binary bit "0" or "1," again depending on which of two possible encoding conventions are employed. Organic-polymer-based memory elements, modified to include an additional diode-acting layer, may be fabricated in dense, two-dimensional arrays.</p>
申请公布号 JP2006517056(A) 申请公布日期 2006.07.13
申请号 JP20050518481 申请日期 2004.01.29
申请人 发明人
分类号 H01L51/30;G11C13/02;H01L27/10;H01L27/28;H01L45/00;H01L51/00;H01L51/05 主分类号 H01L51/30
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