| 摘要 |
A semiconductor device having: a semiconductor substrate; a plurality of semiconductor elements formed in the semiconductor substrate; a metal wiring made of a first metal layer and formed above the semiconductor substrate; a lower electrode made of the first metal layer and formed above the semiconductor substrate; a dielectric film formed on the lower electrode in a shape withdrawing from a periphery of the lower electrode; and an upper electrode formed on the dielectric film in a shape withdrawing from a periphery of the dielectric film, wherein the lower electrode, the dielectric film and the upper electrode form a MIM capacitor element. There are provided a semiconductor device having a MIM capacitor element capable of suppressing leak current as much as possible, and its manufacture method.
|
