发明名称 Dual stage DRAM memory equalization
摘要 A memory device equilibrates voltages in a bit line pair to a reduced voltage level. The reduced equilibrate voltage level can be achieved by separating the conventional equilibrate process so that the positive portion and the negative portion of the sense amplifier are equilibrated at different times. Bit line equilibration can be associated with either the equilibrate step associated with the positive portion of the sense amplifier or the equilibrate step associated with the negative portion of the sense amplifier.
申请公布号 US2006152987(A1) 申请公布日期 2006.07.13
申请号 US20060369968 申请日期 2006.03.08
申请人 JOO YANGSUNG;PINNEY DAVID L;BROWN JASON 发明人 JOO YANGSUNG;PINNEY DAVID L.;BROWN JASON
分类号 G11C7/00 主分类号 G11C7/00
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