| 摘要 |
A memory device for recording and storage of information in at least ternary code comprising recording and readout equipments and at least one memory cell each of these cells including one capacitive element having ferroelectric body or one magnetic memory element having ferromagnetic body, consisting in that said ferroelectric or ferromagnetic body is composed, respectively, of a material chosen from the group including a relaxation ferroelectric of a type transient between a normal ferroelectric and antiferroelectric; a single-crystal multiaxial ferroelectric; a single-crystal multiaxial ferromagnetic; an isotropically polarizable polycrystalline ferroelectric; and an isotropically polarizable polycrystalline ferromagnetic, these materials providing under working conditions discrete electric or magnetic polarization directions, respectively, with at least three electric or magnetic polarization states, respectively, in each memory cell, when specifically electrically or magnetically polarized,respectively, by the recording equipment. |
